REACTION-MECHANISM FOR FLUORINE ETCHING OF SILICON

被引：52

作者：

GARRISON, BJ ^{[1
]}

GODDARD, WA ^{[1
]}

机构：

[1] CALTECH,ARTHUR AMOS NOYES LAB CHEM PHYS,PASADENA,CA 91125

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.36.9805

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9805 / 9808

页数：4

共 50 条

[1] REACTION PROBABILITY AND REACTION-MECHANISM IN SILICON ETCHING WITH A HOT CL-2 MOLECULAR-BEAM
SUZUKI, K
HIRAOKA, S
JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) : 6624 - 6629
[2] CHEMICAL MECHANISM FOR P-DOPING EFFECTS ON SILICON ETCHING REACTION BY FLUORINE
TACHIBANA, A
KAWAUCHI, S
YAMABE, T
JOURNAL OF PHYSICAL CHEMISTRY, 1991, 95 (06) : 2471 - 2476
[3] AN INTERFACE REACTION-MECHANISM FOR THE DRY OXIDATION OF SILICON
MOHARIR, SS
CHANDORKAR, AN
VASI, J
JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) : 2171 - 2173
[4] STUDY ON FLUORINE SILICON REACTION USING DIGITAL ETCHING METHOD
HORIIKE, Y
ISEDA, S
AMAMI, K
SAKAUE, H
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 9 - 9
[5] MECHANISM OF ION-ASSISTED ETCHING OF SILICON BY FLUORINE-ATOMS
YARMOFF, JA
MCFEELY, FR
SURFACE SCIENCE, 1987, 184 (03) : 389 - 400
[6] THE CABRERA-MOTT MECHANISM FOR SILICON ETCHING BY FLUORINE-ATOMS
BABANOV, Y
PROKAZNIKOV, A
SVETOVOY, V
JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 : SB197 - SB198
[7] REACTION-MECHANISM OF BUTYRYLCHOLINESTERASE
AUGUSTINSSON, KB
ERIKSSON, H
CROATICA CHEMICA ACTA, 1975, 47 (03) : 277 - 285
[8] CHEMI-LUMINESCENT REACTION OF SIF2 WITH FLUORINE AND THE ETCHING OF SILICON BY ATOMIC AND MOLECULAR FLUORINE
MUCHA, JA
FLAMM, DL
DONNELLY, VM
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4553 - 4554
[9] REACTION-MECHANISM IN CARBON LIQUID SILICON SYSTEMS AT ELEVATED-TEMPERATURES
PAMPUCH, R
WALASEK, E
BIALOSKORSKI, J
CERAMICS INTERNATIONAL, 1986, 12 (02) : 99 - 106
[10] ETCHING SILICON WITH FLUORINE-GAS
CHEN, M
MINKIEWICZ, VJ
LEE, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : 1946 - 1948

← 1 2 3 4 5 →