REACTION-MECHANISM FOR FLUORINE ETCHING OF SILICON

被引：52

作者：

GARRISON, BJ ^{[1
]}

GODDARD, WA ^{[1
]}

机构：

[1] CALTECH,ARTHUR AMOS NOYES LAB CHEM PHYS,PASADENA,CA 91125

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.36.9805

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9805 / 9808

页数：4

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