PHOTOELECTRIC PROPERTIES OF INDIUM-DOPED SILICON

被引：0
|
作者：
GODIK, EE [1 ]
SINIS, VP [1 ]
机构：
[1] ACAD SCI USSR,INST RADIOENGN & ELECTR,MOSCOW V-71,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：347 / 348
页数：2
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