CURRENT-VOLTAGE CHARACTERISTICS OF BISMUTH-BISMUTH OXIDE-INDIUM SANDWICH STRUCTURES AT ROOM-TEMPERATURE

被引：0

作者：

RAHMAN, A ^{[1
]}

MAHANTA, PC ^{[1
]}

机构：

[1] GAUHATI UNIV,DEPT PHYS,GAUHATI,INDIA

来源：

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：238 / 241

页数：4

共 11 条

[1] CAMPBELL OS, 1971, REP PROG PHYS, V34, P315
[2] DEKKER AJ, 1969, SOLID STATE PHYSICS
[3] TUNNELING THROUGH THIN INSULATING LAYERS
FISHER, JC
GIAEVER, I
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (02) : 172 - &
[4] ELECTRODE EFFECTS ON ALUMINUM OXIDE TUNNEL JUNCTIONS
HANDY, RM
[J]. PHYSICAL REVIEW, 1962, 126 (06): : 1968 - &
[5] TUNNELING AND BAND STRUCTURE IN SEMIMETALS
HAUSER, JJ
TESTARDI, LR
[J]. PHYSICAL REVIEW LETTERS, 1968, 20 (01) : 12 - +
[6] LINDMAYER J, 1971, FUNDAMENTALS SEMICON
[7] LUTSKII VN, 1966, JETP LETT-USSR, V4, P179
[8] Mott N., 1958, THEORY PROPERTIES ME
[9] A NEW THEORY OF SIZE EFFECT IN ELECTRICAL CONDUCTION
PARROTT, JE
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (548P): : 1143 - &
[10] ZIMAN ZM, 1965, PRINCIPLES THEORY SO