STRAIN MAPPING OF ULTRATHIN EPITAXIAL ZNTE AND MNTE LAYERS EMBEDDED IN CDTE

被引：89
作者：
JOUNEAU, PH
TARDOT, A
FEUILLET, G
MARIETTE, H
CIBERT, J
机构：
[1] CEA,DEPT RECH FONDAMENTALE MAT CONDENSEE,CNRS,EQUIPE MICROSTRUCT SEMICOND 2-6,F-38054 GRENOBLE 9,FRANCE
[2] UNIV JOSEPH FOURIER,CEA,CNRS,EQUIPE MICROSTRUCT SEMICOND 2-6,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 11期
关键词：
D O I：
10.1063/1.356641
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-resolution electron microscopy is used to investigate the morphology of ultrathin pseudomorphic (001) ZnTe and MnTe strained layers grown in CdTe. Local distortions of the crystal lattice are measured directly on high-resolution images by use of image processing software. In the case of ZnTe/CdTe superlattices, the method yields the location of Zn within each place in the heterostructure and the total amount of Zn per period. For MnTe layers embedded in CdTe, one can deduce the atomic morphology of the interfaces which are shown to present a clear asymmetry.
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页码：7310 / 7316
页数：7
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