CIRCULAR ETCH PITS IN ION-IMPLANTED AMORPHOUS SILICON FILMS

被引:5
|
作者
TU, KN [1 ]
TAN, SI [1 ]
CROWDER, BL [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.1654636
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:274 / 275
页数:2
相关论文
共 50 条
  • [21] DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED AMORPHOUS-SILICON
    COFFA, S
    PRIOLO, F
    BATTAGLIA, A
    PHYSICAL REVIEW LETTERS, 1993, 70 (24) : 3756 - 3759
  • [22] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL
    DENNIS, JR
    HALE, EB
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1119 - 1127
  • [23] Optical contrast in ion-implanted amorphous silicon carbide nanostructures
    Takahashi, S.
    Dawson, P.
    Zayats, A. V.
    Bischoff, L.
    Angelov, O.
    Dimova-Malinovska, D.
    Tsvetkova, T.
    Townsend, P. D.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (23) : 7492 - 7496
  • [24] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON
    CSEPREGI, L
    MAYER, JW
    SIGMON, TW
    APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93
  • [25] CHEMICAL ETCHING OF ION-IMPLANTED AMORPHOUS-SILICON CARBIDE
    EDMOND, JA
    PALMOUR, JW
    DAVIS, RF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : 650 - 652
  • [26] HYDROGEN PROFILING IN GAS-PHASE DOPED AND ION-IMPLANTED AMORPHOUS-SILICON FILMS
    DEMOND, FJ
    MULLER, G
    DAMJANTSCHITSCH, H
    MANNSPERGER, H
    KALBITZER, S
    LECOMBER, PG
    SPEAR, WE
    JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 779 - 782
  • [27] HYDROGEN ION-IMPLANTED SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS
    SCHALCH, D
    SCHARMANN, A
    WOLFRAT, R
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 105 (02): : K81 - K86
  • [28] VOIDS IN ION-IMPLANTED SILICON
    ROMANOV, SI
    SMIRNOV, LS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 121 - 126
  • [29] ION-IMPLANTED ARSENIC IN SILICON
    LARSEN, AN
    CHRISTENSEN, B
    CHRISTENSEN, PH
    SHIRYAEV, SY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 697 - 701
  • [30] ESR SPLITTING INDUCED BY ION-IMPLANTED FLUORINE IN AMORPHOUS-SILICON
    PENG, SQ
    LIU, JX
    KE, N
    LI, PX
    WONG, SP
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 383 - 386