ALGAINP VISIBLE RESONANT-CAVITY LIGHT-EMITTING-DIODES

被引：21
作者：
LOTT, JA
SCHNEIDER, RP
ZOLPER, JC
MALLOY, KJ
机构：
[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131
[2] UNIV NEW MEXICO,DEPT ELECT & COMP ENGN,ALBUQUERQUE,NM 87131
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 06期
关键词：
D O I：
10.1109/68.219692
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Visible (670 nm) resonant cavity light-emitting diodes (RCLED's) composed entirely of AlGaInP alloys are reported. The devices consist of a strained quantum well optical cavity active region surrounded by AlInP/(AlGa)InP distributed Bragg reflectors (DBR's). The bottom DBR is a 60.5 period high reflector while the top partial reflector, which determines the emission linewidth, is a five-period output coupling DBR with a reflectance of about 57%. The devices exhibit linewidths of 4.8 nm (13.3 meV) at 300 K and are promising for plastic fiber communication systems and monochromatic displays.
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收藏
页码：631 / 633
页数：3
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