GAS SOURCE IODINE NORMAL-TYPE DOPING OF MOLECULAR-BEAM EPITAXIALLY GROWN CDTE

被引：33

作者：

RAJAVEL, D ^{[1
]}

SUMMERS, CJ ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL, PHYS SCI LAB, ATLANTA, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期

关键词：

D O I：

10.1063/1.107039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly conductive n-type CdTe films were grown by molecular beam epitaxy by iodine doping, utilizing ethyliodide as the dopant precursor. The room-temperature electron concentration increased from 8 X 10(16) to 3 X 10(18) cm-3 for dopant flow rate from 10(-5) to 10(-2) sccm and the films exhibited very high electron mobilities. The structural and optical properties were determined by x-ray double crystal rocking curve and photoluminescence measurements. Secondary ion mass spectroscopic analysis indicated a high degree of electrical activity, and sharp dopant profiles. These results demonstrate that iodine is highly effective for the n-type doping of CdTe.

引用

页码：2231 / 2233

页数：3

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