DIFFUSIVITY SUMMARY OF B, GA, P, AS, AND SB IN SIO2

被引：69

作者：

GHEZZO, M ^{[1
]}

BROWN, DM ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 01期

关键词：

D O I：

10.1149/1.2403391

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：146 / 148

页数：3

共 21 条

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[8] ARSENIC GLASS SOURCE DIFFUSION IN SI AND SIO2 [J].

GHEZZO, M ;

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :110-116

[9] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

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[10] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER [J].

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SAH, CT .

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