NEW LINEWIDTH ENHANCEMENT DETERMINATION METHOD IN SEMICONDUCTOR-LASERS BASED ON SPECTRUM ANALYSIS ABOVE AND BELOW THRESHOLD

被引：20

作者：

TOFFANO, Z

DESTREZ, A

BIROCHEAU, C

HASSINE, L

机构：

[1] Laboratoire d’Optoélectronique Service Radioélectricité et Electronique, Ecole Supérieure d’Electricitè SUPELEC, Plateau de Moulon

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 01期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Linewidth measurements of singlemode and multimode InGaAsP lasers were made above and below threshold with adapted interferometers. Linewidth against inverse power plots, DELTA-nu = f(1/P), show different Schawlow-Townes slopes above and below threshold. Differences have been observed depending on singlemode or multimode laser behaviour. In the singlemode case the linewidth enhancement factor has been determined (alpha = 2.6) by extrapolating and correlating results above and below threshold.

引用

页码：9 / 11

页数：3

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