RAMAN-STUDY OF STRESS-RELIEVED SILICON-ON-SAPPHIRE FILMS PREPARED BY CW-LASER ANNEALING

被引：6
|
作者：
MAVI, HS
SHUKLA, AK
JAIN, KP
ABBI, SC
BESERMAN, R
机构：
[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,IL-32000 HAIFA,ISRAEL
[2] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 11期
关键词：
D O I：
10.1063/1.347511
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Continuous-wave laser annealing experiments for producing stress-relieved crystalline silicon-on-sapphire (c-SOS) films are reported. A comparative study of laser annealing has been made on c-SOS and phosphorous-implanted c-SOS films. Raman scattering was used to monitor stresses during the laser annealing process and for characterizing the processed films. The best stress-relieved c-SOS films were obtained by laser annealing the phosphorous-implanted chemical-vapor-deposition-grown SOS films.
引用
收藏
页码：7815 / 7819
页数：5
相关论文
共 8 条
  • [1] STRESS-RELIEVED REGROWTH OF SILICON ON SAPPHIRE BY LASER ANNEALING
    SAIHALASZ, GA
    FANG, FF
    SEDGWICK, TO
    SEGMULLER, A
    APPLIED PHYSICS LETTERS, 1980, 36 (06) : 419 - 422
  • [2] STRESS RELIEVED SILICON ON SAPPHIRE BY LASER ANNEALING
    SAIHALASZ, GA
    FANG, FF
    SEDGWICK, TO
    SEGMULLER, A
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 702 - 702
  • [3] RAMAN-STUDY OF CW LASER-INDUCED CRYSTALLIZATION OF A-SI-H FILMS ON QUARTZ AND SAPPHIRE SUBSTRATES
    MAVI, HS
    JAIN, KP
    SHUKLA, AK
    ABBI, SC
    BESERMAN, R
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (06) : 3696 - 3701
  • [4] RAMAN-SCATTERING STUDY OF ION-IMPLANTED AND CW-LASER ANNEALED POLYCRYSTALLINE SILICON
    NAKASHIMA, S
    OIMA, S
    MITSUISHI, A
    NISHIMURA, T
    FUKUMOTO, T
    AKASAKA, Y
    SOLID STATE COMMUNICATIONS, 1981, 40 (07) : 765 - 768
  • [5] ANOMALOUS RESIDUAL-STRESS IN PULSED-LASER-ANNEALED SILICON-ON-SAPPHIRE REVEALED BY RAMAN-SCATTERING
    YAMAZAKI, K
    YAMADA, M
    YAMAMOTO, K
    ABE, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : L299 - L302
  • [6] RAMAN MICROPROBE STUDY ON TEMPERATURE DISTRIBUTION DURING CW LASER-HEATING OF SILICON ON SAPPHIRE
    YAMADA, M
    NAMBU, K
    ITOH, Y
    YAMAMOTO, K
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1350 - 1354
  • [7] RAMAN-STUDY OF AMORPHOUS TO MICROCRYSTALLINE PHASE-TRANSITION IN CW LASER ANNEALED A-SI-H FILMS
    MAVI, HS
    SHUKLA, AK
    ABBI, SC
    JAIN, KP
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) : 5322 - 5326
  • [8] Raman study of silicon nanocrystals formed in SINx films by excimer laser or thermal annealing
    Volodin, VA
    Efremov, MD
    Gritsenko, VA
    Kochubei, SA
    APPLIED PHYSICS LETTERS, 1998, 73 (09) : 1212 - 1214
1