THE STATES OF HYDROGEN IN SILICON

被引：5
作者：
TOKMOLDIN, SZ
MUKASHEV, BN
机构：
[1] Phys. Tech. Inst., Acad. of Sci., Alma-Ata, Kazakh SSR
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷 / 47期
关键词：
D O I：
10.1088/0953-8984/3/47/009
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Isotope studies of states of atomic hydrogen in silicon are performed. It is shown that H is a bistable impurity: it has an equilibrium site at a tetrahedral interstitial site for H+ and H- and at a bond-centred site for H0. It is found that, in the tetrahedral configuration, H has donor and acceptor levels in the gap, located close to E(v) + 0.3 eV and E(c) - 0.2 eV, respectively.
引用
收藏
页码：9363 / 9370
页数：8
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