INTERSTITIAL OXYGEN DETERMINATION NEAR EPITAXIAL SILICON AND CZOCHRALSKI SILICON INTERFACE

被引：5

作者：

GEDDO, M

PIVAC, B

BORGHESI, A

STELLA, A

PEDROTTI, M

机构：

[1] MEMC ELECTR MAT SPA, I-28100 NOVARA, ITALY

[2] RUDJER BOSKOVIC INST, YU-41000 ZAGREB, CROATIA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.104637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxygen content near epitaxial layer-substrate silicon interface was investigated using a micro Fourier transform infrared technique. Systematic measurements, performed in a transversal wafer cross-section configuration, clearly indicated the presence of interstitial oxygen in the epitaxial layer when it was grown on n-type substrates, while no evidence of oxygen in it was obtained (in concentration detectable by the infrared technique) when grown on p-type substrates. Interstitial oxygen profiles, near the epitaxial layer-substrate interface, obtained by analyzing the optical data, are reported and discussed considering different combinations of dopants in the substrate and in the epilayer.

引用

页码：370 / 372

页数：3

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