FREQUENCY DEPENDENCE OF NONLINEAR ACOUSTOELECTRIC GAIN IN PIEZOELECTRIC SEMICONDUCTORS

被引：12

作者：

BUTCHER, PN

OGG, NR

机构：

[1] University of Warwick, Coventry

[2] Royal Radar Establishment, Malvern

来源：

PHYSICS LETTERS A | 1969年 / A 30卷 / 04期

关键词：

D O I：

10.1016/0375-9601(69)90865-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The frequency dependence of acoustoelectric gain is calculated in the nonlinear regime for a sinusoidal electric potential. The frequency of maximum fundamental gain is found to reduce by a factor of 4 at a fundamental flux level of 6 kW/cm2. © 1969.

引用

页码：220 / &

共 7 条

[1]

BEALE JRA, 1964, PHYS REV, V135, P1761

[2]

Butcher P. N., 1969, British Journal of Applied Physics (Journal of Physics D), V2, P333

[3]

BUTLER M, 1969, PRIVATE COMMUNICATIO

[4]

GUREVICH VL, 1963, SOV PHYS SOLID STATE, V5, P888

[5] NONLINEAR THEORY OF ULTRASONIC WAVE AMPLIFICATION AND CURRENT SATURATION IN PIEZOELECTRIC SEMICONDUCTORS [J].