FREQUENCY DEPENDENCE OF NONLINEAR ACOUSTOELECTRIC GAIN IN PIEZOELECTRIC SEMICONDUCTORS

被引：12

作者：

BUTCHER, PN

OGG, NR

机构：

[1] University of Warwick, Coventry

[2] Royal Radar Establishment, Malvern

来源：

PHYSICS LETTERS A | 1969年 / A 30卷 / 04期

关键词：

D O I：

10.1016/0375-9601(69)90865-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The frequency dependence of acoustoelectric gain is calculated in the nonlinear regime for a sinusoidal electric potential. The frequency of maximum fundamental gain is found to reduce by a factor of 4 at a fundamental flux level of 6 kW/cm2. © 1969.

引用

页码：220 / &

共 7 条

[1] BEALE JRA, 1964, PHYS REV, V135, P1761
[2] Butcher P. N., 1969, British Journal of Applied Physics (Journal of Physics D), V2, P333
[3] BUTLER M, 1969, PRIVATE COMMUNICATIO
[4] GUREVICH VL, 1963, SOV PHYS SOLID STATE, V5, P888
[5] NONLINEAR THEORY OF ULTRASONIC WAVE AMPLIFICATION AND CURRENT SATURATION IN PIEZOELECTRIC SEMICONDUCTORS
TIEN, PK
[J]. PHYSICAL REVIEW, 1968, 171 (03): : 970 - &
[6] AMPLIFICATION OF ULTRASONIC WAVES IN PIEZOELECTRIC SEMICONDUCTORS
WHITE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2547 - &
[7] ZUCKER J, 1968, P INT C PHYS SEMICON, P903

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