NONCOMMUTATIVE STRUCTURE OF GAAS QUANTUM WELL INTERFACES AND INEQUIVALENT INTERFACE IMPURITY INCORPORATION

被引：10

作者：

BIMBERG, D ^{[1
]}

BAUER, RK ^{[1
]}

OERTEL, D ^{[1
]}

MARS, D ^{[1
]}

MILLER, JN ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

JOURNAL DE PHYSIQUE | 1987年 / 48卷 / C-5期

关键词：

D O I：

10.1051/jphyscol:1987515

中图分类号：

学科分类号：

摘要：

引用

页码：93 / 96

页数：4

共 11 条

[1]

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[3] STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION [J].

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[4]

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[5]

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[7]

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[8] CORRELATION OF OPTICAL-SPECTRA AND ATOMIC SCALE STRUCTURE OF ALINAS-GAINAS QUANTUM-WELLS [J].

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[9] OBSERVATION OF KINETICALLY CONTROLLED MONOLAYER STEP HEIGHT DISTRIBUTION AT NORMAL AND INVERTED INTERFACES IN ULTRATHIN GAAS/ALXGA1-X AS QUANTUM-WELLS [J].

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[10] OPTICAL CHARACTERIZATION OF INTERFACE DISORDER IN GAAS-GA1-XALXAS MULTI-QUANTUM WELL STRUCTURES [J].

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