MONITORING OF INTERNAL GETTERING DURING BIPOLAR PROCESSES

被引：19

作者：

GRAFF, K

HEFNER, HA

HENNERICI, W

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 04期

关键词：

D O I：

10.1149/1.2095846

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：952 / 957

页数：6

共 12 条

[1] REDUCTION OF IRON SOLUBILITY IN SILICON WITH OXYGEN PRECIPITATES [J].

COLAS, EG ;

WEBER, ER .

APPLIED PHYSICS LETTERS, 1986, 48 (20) :1371-1373

[2]

GOSELE U, 1985, MATER RES SOC S P, V36, P105

[3]

GOSELE U, 1983, ELECTROCHEMICAL SOC, P17

[4] PRECISE EVALUATION OF OXYGEN MEASUREMENTS ON CZ-SILICON WAFERS [J].

GRAFF, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) :1378-1381

[5]

GRAFF K, 1985, MATER RES SOC S P, V36, P19

[6]

GRAFF K, 1986, ELECTROCHEMICAL SOC, P751

[7]

HUFF HR, 1985, SOLID STATE TECH MAR, P103

[8] INTERNAL GETTERING IN BIPOLAR PROCESS - EFFECT ON CIRCUIT PERFORMANCE AND RELATIONSHIP TO OXYGEN PRECIPITATION KINETICS [J].

JASTRZEBSKI, L ;

SOYDAN, R ;

GOLDSMITH, B ;

MCGINN, JT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2944-2953

[9]

PINIZOTTO RF, 1985, MRS S P, V36, P275

[10] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J].

TAN, TY ;

GARDNER, EE ;

TICE, WK .

APPLIED PHYSICS LETTERS, 1977, 30 (04) :175-176

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