X-RAY MASK INSPECTION USING REPLICATED RESIST PATTERNS

被引：7
|
作者：
SEKIMOTO, M
TSUYUZAKI, H
OKADA, I
SHIBAYAMA, A
MATSUDA, T
机构：
[1] NTT LSI Laboratories, Atsugi, Kanagawa, 243-01
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 12B期
关键词：
X-RAY MASK; INSPECTION; DIE-TO-DIE COMPARISON; DIRECT MASK INSPECTION; PRINTED-WAFER INSPECTION; SINGLE-DIE MASK; DEFECT DISCRIMINATION; SCANNING ELECTRON BEAM; SECONDARY ELECTRON;
D O I：
10.1143/JJAP.33.6913
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new X-ray mask inspection method using replicated resist patterns is proposed. It is able to detect fatal opaque defects on the back surface of the mask and at the bottom of the hole pattern, in addition to those on the front surface. It can also ignore transparent defects on the mask. This method is useful even for defect detection on a single-die mask through die-to-die comparison. For the false process defects occurring during the replication process, a discrimination procedure using a 2-step die-to-die comparison is proposed. In inspection tests with SEMSpec, we investigate the relation between the detection sensitivity to small resist defects and the conductive-coating thickness on them.
引用
收藏
页码：6913 / 6918
页数：6
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