DEPTH AND VELOCITY OF THE LASER-MELTED FRONT FROM AN ANALYTICAL SOLUTION OF THE HEAT-CONDUCTION EQUATION

被引:16
作者
BERTOLOTTI, M [1 ]
SIBILIA, C [1 ]
机构
[1] CNR,NATL QUANTUM ELECTR & PLASMA GRP,ROME,ITALY
关键词
D O I
10.1109/JQE.1981.1070643
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1980 / 1989
页数:10
相关论文
共 16 条
[1]   MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].
BAERI, P ;
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797
[2]  
BASS M, 1980, LASER HEATING SOLIDS
[3]   CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE [J].
BELL, RO ;
TOULEMONDE, M ;
SIFFERT, P .
APPLIED PHYSICS, 1979, 19 (03) :313-319
[4]  
BOLEY BA, 1963, 3RD P S NAV STRUCT M
[5]  
Carslaw H.S., 1962, CONDUCTION HEAT SOLI
[6]   MELTING OF A HALF-SPACE SUBJECTED TO A CONSTANT HEAT INPUT [J].
COHEN, MI .
JOURNAL OF THE FRANKLIN INSTITUTE-ENGINEERING AND APPLIED MATHEMATICS, 1967, 283 (04) :271-+
[7]   HIGH-INTENSITY LASER-INDUCED VAPORIZATION AND EXPLOSION OF SOLID MATERIAL [J].
DABBY, FW ;
PAEK, U .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (02) :106-&
[8]  
DESCHAMPS G, 1970, MATH APPLIED PHYSICS
[9]   LASER-HEATING AND MELTING OF THIN-FILMS ON LOW-CONDUCTIVITY SUBSTRATES [J].
GHEZ, RA ;
LAFF, RA .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2103-2110
[10]  
Goodman T.R., 1964, ADV HEAT TRANSFER, V1, P51, DOI DOI 10.1016/S0065-2717(08)70097-2