SURFACE CONTROLLED INP-MIS (METAL-INSULATOR-SEMICONDUCTOR) TRIODES

被引:8
作者
HIROTA, Y
OKAMURA, M
YAMAGUCHI, E
NISHIOKA, T
SHINODA, Y
KOBAYASHI, T
机构
关键词
D O I
10.1063/1.329127
中图分类号
O59 [应用物理学];
学科分类号
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页码:3498 / 3503
页数:6
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[41]   SIMPLER TECHNIQUE FOR THE FABRICATION OF METAL-INSULATOR-SEMICONDUCTOR (MIS) SILICON SOLAR CELL. [J].
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