PASSIVATION OF ION-BEAM DAMAGE IN METAL-OXIDE-SILICON STRUCTURES BY ROOM-TEMPERATURE HYDROGENATION

被引：5

作者：

KAR, S ^{[1
]}

SRIKANTH, K ^{[1
]}

ASHOK, S ^{[1
]}

机构：

[1] PENN STATE UNIV,CTR ELECTR MAT & PROC,UNIV PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 24期

关键词：

D O I：

10.1063/1.106789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 angstrom. Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.

引用

页码：3001 / 3003

页数：3

共 50 条

[41] THE RELATION BETWEEN POSITIVE CHARGE AND BREAKDOWN IN METAL-OXIDE-SILICON STRUCTURES
WEINBERG, ZA
NGUYEN, TN
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1947 - 1956
[42] PARAMAGNETIC TRIVALENT SILICON CENTERS IN GAMMA-IRRADIATED METAL-OXIDE-SILICON STRUCTURES
LENAHAN, PM
DRESSENDORFER, PV
APPLIED PHYSICS LETTERS, 1984, 44 (01) : 96 - 98
[43] EPITAXIAL-GROWTH OF NBN THIN-FILMS AT ROOM-TEMPERATURE BY ION-BEAM SPUTTERING DEPOSITION
TAKEI, K
NAGAI, K
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : 993 - 994
[44] ION-INDUCED ELECTRICAL BREAKDOWN IN METAL-OXIDE-SILICON CAPACITORS
MILGRAM, AA
JOURNAL OF APPLIED PHYSICS, 1990, 67 (03) : 1461 - 1470
[45] NEW SIGE DIELECTRICS GROWN AT ROOM-TEMPERATURE BY LOW-ENERGY ION-BEAM OXIDATION AND NITRIDATION
VANCAUWENBERGHE, O
HELLMAN, OC
HERBOTS, N
TAN, WJ
APPLIED PHYSICS LETTERS, 1991, 59 (16) : 2031 - 2033
[46] Electrical properties of metal-oxide-silicon structures with LaAlO3 as gate oxide
Mereu, B
Sarau, G
Dimoulas, A
Apostolopoulos, G
Pintilie, I
Botila, T
Pintilie, L
Alexe, A
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 109 (1-3): : 94 - 98
[47] Influence of carbon monoxide, water and oxygen on high temperature catalytic metal-oxide-silicon carbide structures
Nakagomi, S
Tobias, P
Baranzahi, A
Lundstrom, I
Martensson, P
Spetz, AL
SENSORS AND ACTUATORS B-CHEMICAL, 1997, 45 (03) : 183 - 191
[48] Tuning the shape and damage in ion-beam induced ripples on silicon
Biermanns, Andreas
Hanisch, Antje
Grenzer, Joerg
Metzger, Till Hartmut
Pietsch, Ullrich
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (11): : 2608 - 2611
[49] ION-BEAM MIXING AT METAL-OXIDE INTERFACES
FREIRE, FL
STEDILE, FC
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 : A301 - A302
[50] Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures
Ragnarsson, L.-A. (ragnarl@imec.be), 1600, American Institute of Physics Inc. (93):

← 1 2 3 4 5 →