PASSIVATION OF ION-BEAM DAMAGE IN METAL-OXIDE-SILICON STRUCTURES BY ROOM-TEMPERATURE HYDROGENATION

被引：5
|
作者：
KAR, S [1 ]
SRIKANTH, K [1 ]
ASHOK, S [1 ]
机构：
[1] PENN STATE UNIV,CTR ELECTR MAT & PROC,UNIV PK,PA 16802
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 24期
关键词：
D O I：
10.1063/1.106789
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 angstrom. Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.
引用
收藏
页码：3001 / 3003
页数：3
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