FILLINGNESS DEPENDENCE OF ELECTRONIC-STRUCTURES IN STRONGLY CORRELATED ELECTRON-SYSTEMS - TITANATES AND VANADATES

被引:27
作者
TOKURA, Y
机构
[1] Department of Physics, University of Tokyo, Tokyo
关键词
ELECTRON CORRELATION; METAL-INSULATOR TRANSITION; TITANATES; VANADATES; FILLINGNESS; VALENCE CONTROL; OPTICAL SPECTRA;
D O I
10.1016/0022-3697(92)90152-4
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Fillingness (or 3d electron number) dependence of electronic structures in perovskite-like, titanates and vanadates is overviewed based on our recent spectroscopic studies in comparison with the case of cuprate superconductors. In common with the cuprates, though different quantitatively, changes of carrier mass and scattering rate as Well as formation of the ingap states are observed with hole-doping in the Ti3+- and V3+-based Mott insulators.
引用
收藏
页码:1619 / 1625
页数:7
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