LASER-INDUCED DEGRADATION OF THE PHOTOLUMINESCENCE INTENSITY OF POROUS SILICON

被引：21
|
作者：
TSAI, C [1 ]
LI, KH [1 ]
CAMPBELL, JC [1 ]
HANCE, BK [1 ]
WHITE, JM [1 ]
机构：
[1] UNIV TEXAS,DEPT CHEM & BIOCHEM,AUSTIN,TX 78712
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 06期
关键词：
POROUS SI; PHOTOLUMINESCENCE; LASER-INDUCED DEGRADATION;
D O I：
10.1007/BF02655425
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transmission Fourier-transform infrared (FTIR) spectroscopy has been used to monitor laser-induced degradation of the photoluminescence (PL) intensity of porous Si. It is observed that the release of hydrogen from silicon hydride surface species coincides with a decrease in the PL intensity and oxidation of the porous Si. The as-anodized PL characteristics can be recovered, with a slight blue shift, by a brief immersion in hydrofluoric acid.
引用
收藏
页码：589 / 591
页数：3
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