SHALLOW SILICIDE CONTACTS FORMED BY USING CODEPOSITED PT2SI AND PT1.2 SI FILMS

被引：14

作者：

EIZENBERG, M ^{[1
]}

FOLL, H ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 06期

关键词：

D O I：

10.1063/1.91981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：547 / 549

页数：3

共 12 条

[1] PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J].

CANALI, C ;

CATELLANI, C ;

PRUDENZIATI, M ;

WADLIN, WH ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1977, 31 (01) :43-45

[2] EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS [J].

EIZENBERG, M ;

OTTAVIANI, G ;

TU, KN .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :87-89

[3]

EIZENBERG M, 1980, 157TH EL SOC M ST LO

[4]

FOLL H, UNPUBLISHED

[5] SHALLOW SILICIDE-TO-SILICON CONTACTS - THE CASE OF AMORPHOUS-PD80SI20-TO-SILICON [J].

KRITZINGER, S ;

TU, KN .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :205-208

[6] SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS [J].

MAYER, JW ;

LAU, SS ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5855-5859

[7] CONTACT REACTION BETWEEN SI AND PD-W ALLOY-FILMS [J].

OLOWOLAFE, JO ;

TU, KN ;

ANGILELLO, J .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6316-6320

[8] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J].

OTTAVIANI, G ;

TU, KN ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1980, 44 (04) :284-287

[9]

Rhoderick E.H., 1978, METAL SEMICONDUCTORS

[10]

SHENG TT, 1976, IEEE T ELECTRON DEV, V23, P531, DOI 10.1109/T-ED.1976.18447

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