STRUCTURAL AND ELECTRICAL-PROPERTIES OF CO GROWN ON SI(111) BY LOW-ENERGY ION-BEAM DEPOSITION

被引：2

作者：

BOUSETTA, A ^{[1
]}

ALBAYATI, AH ^{[1
]}

VANDENBERG, JA ^{[1
]}

ARMOUR, DG ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECTR & ELECT ENGN,SALFORD M5 4WT,LANCS,ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90275-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Co/Si interface formation was monitored by a high-depth-resolution medium-energy ion scattering (MEIS) spectroscopy. High-purity Co-59 thin films were deposited either at room temperature (RT) or at 400-degrees-C onto a clean Si(111) substrate using a very-low-energy (50 eV) ion beam deposition (IBD). In situ Auger electron spectroscopy (AES) was used to ascertain the atomic cleanliness of the silicon surface before growth. A post furnace anneal under N2 was performed in the range 300-700-degrees-C after Co deposition for the silicide formation. The structure and the effect of annealing on the electrical properties of these epitaxial film were investigated by MEIS and four-point probe measurements, respectively. Finally barrier heights were measured in this range of annealing temperature using the C-V technique.

引用

页码：480 / 485

页数：6

共 18 条

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