MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON

被引：288

作者：

FULLER, CS

SEVERIENS, JC

机构：

来源：

PHYSICAL REVIEW | 1954年 / 96卷 / 01期

关键词：

D O I：

10.1103/PhysRev.96.21

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：21 / 24

页数：4

共 9 条

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FULLER, CS
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[3] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS INTO GERMANIUM
FULLER, CS
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[4] DIFFUSION OF LITHIUM INTO GERMANIUM AND SILICON
FULLER, CS
DITZENBERGER, JA
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[5] PROPERTIES OF THERMALLY PRODUCED ACCEPTORS IN GERMANIUM
FULLER, CS
THEUERER, HC
VANROOSBROECK, W
[J]. PHYSICAL REVIEW, 1952, 85 (04): : 678 - 679
[6] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM
HAYNES, JR
SHOCKLEY, W
[J]. PHYSICAL REVIEW, 1951, 81 (05): : 835 - 843
[7] MORIN FJ, COMMUNICATION
[8] PEARSON GL, 1954, Patent No. 2669692
[9] GROWTH OF GERMANIUM SINGLE CRYSTALS CONTAINING P-N JUNCTIONS
TEAL, GK
SPARKS, M
BUEHLER, E
[J]. PHYSICAL REVIEW, 1951, 81 (04): : 637 - 637