MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON

被引：289

作者：

FULLER, CS

SEVERIENS, JC

机构：

来源：

PHYSICAL REVIEW | 1954年 / 96卷 / 01期

关键词：

D O I：

10.1103/PhysRev.96.21

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：21 / 24

页数：4

共 9 条

[1]

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[7]

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