ZN-DIFFUSED LASER JUNCTIONS IN INXGA1-XAS AND INASXP1-X GROWN FROM IN SOLUTION AT CONSTANT TEMPERATURE

被引：18

作者：

MACKSEY, HM

ZACK, GW

HOLONYAK, N

CAMPBELL, JC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 08期

关键词：

D O I：

10.1063/1.1661750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3533 / &

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