VAPOR-PHASE GROWTH OF INGAASP-INP DH STRUCTURES BY THE DUAL-GROWTH-CHAMBER METHOD

被引：57
作者：
MIZUTANI, T
YOSHIDA, M
USUI, A
WATANABE, H
YUASA, T
HAYASHI, I
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 02期
关键词：
D O I：
10.1143/JJAP.19.L113
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L113 / L116
页数：4
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