Features of tensoresistance in single crystals of germanium and silicon with different dopants

被引：2
作者：
Baranskii, P., I [1 ]
Gaidar, G. P. [2 ]
机构：
[1] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 45 Prospect Nauky, UA-03680 Kiev, Ukraine
[2] Natl Acad Sci Ukraine, Inst Nucl Res, 47 Prospect Nauky, UA-03680 Kiev, Ukraine
来源：
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2016年 / 19卷 / 01期
关键词：
germanium; silicon; dopant impurity; tensoresistance; anisotropy parameter of mobility;
D O I：
10.15407/spqeo19.01.039
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of rho(X)/rho(0) = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.
引用
收藏
页码：39 / 43
页数：5
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