Features of tensoresistance in single crystals of germanium and silicon with different dopants

被引：2
作者：
Baranskii, P., I [1 ]
Gaidar, G. P. [2 ]
机构：
[1] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 45 Prospect Nauky, UA-03680 Kiev, Ukraine
[2] Natl Acad Sci Ukraine, Inst Nucl Res, 47 Prospect Nauky, UA-03680 Kiev, Ukraine
来源：
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2016年 / 19卷 / 01期
关键词：
germanium; silicon; dopant impurity; tensoresistance; anisotropy parameter of mobility;
D O I：
10.15407/spqeo19.01.039
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of rho(X)/rho(0) = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.
引用
收藏
页码：39 / 43
页数：5
相关论文
共 50 条
  • [31] Optical and structural characterisation of single and multilayer germanium/silicon monoxide systems
    Pérez, G
    Bernal-Oliva, AM
    Márquez, E
    González-Leal, JM
    Morant, C
    Génova, I
    Trigo, JF
    Sanz, JM
    THIN SOLID FILMS, 2005, 485 (1-2) : 274 - 283
  • [32] Features of piezoresistance in heavily doped n-silicon crystals
    Gaidar, G. P.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2013, 16 (01) : 80 - 83
  • [33] Silicon single crystals ion-doped with ytterbium
    D. É. Nazyrov
    S. A. Goncharov
    A. V. Suvorov
    Technical Physics Letters, 2000, 26 : 326 - 327
  • [34] Silicon single crystals ion-doped with ytterbium
    Nazyrov, DÉ
    Goncharov, SA
    Suvorov, AV
    TECHNICAL PHYSICS LETTERS, 2000, 26 (04) : 326 - 327
  • [35] Structure changes caused by the stress gradient in subsurface layers of germanium single crystals
    Nadtochy, V
    Zhikharev, I
    Golodenko, M
    Nechvolod, M
    INTERFACIAL EFFECTS AND NOVEL PROPERTIES OF NANOMATERIALS, 2003, 94 : 253 - 256
  • [36] Effect of Annealing on The Behavior of Oxygen Dissolved in Germanium and Optical Properties of Single Crystals
    Shimanskii, A. F.
    Podkopaev, O. I.
    Pavluk, T. O.
    Kopytkova, S. A.
    Gorodishcheva, A. N.
    Filatov, R. A.
    IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY, 2016, 2016 : 142 - 148
  • [37] Technology and Thermomechanics in Growing Tubular Silicon Single Crystals
    Verezub N.A.
    Kozhitov L.V.
    Kondratenko T.T.
    Prostomolotov A.I.
    Silaev I.V.
    Russian Microelectronics, 2022, 51 (08): : 677 - 685
  • [38] Particular of radiation transmission of monoisotopic germanium single crystals in the terahertz spectral range
    Kropotov G.I.
    Kaplunov I.A.
    Rogalin V.E.
    Shakhmin A.A.
    Bulanov A.D.
    Applied Physics, 2024, 24 (01): : 80 - 84
  • [39] Simulation of the creation of a defect structure of dislocation-free germanium single crystals
    Talanin, V., I
    Talanin, I. E.
    Matsko, O.
    JOURNAL OF CRYSTAL GROWTH, 2020, 533
  • [40] Calculation of the electron mobility for the Δ1 model of the conduction band of germanium single crystals
    Luniov, S. V.
    Nazarchuk, P. F.
    Burban, O. V.
    SEMICONDUCTORS, 2014, 48 (04) : 438 - 441
12345