LASER AND ELECTRON-BEAM ANNEALING OF IMPLANTED SEMI-INSULATING GAAS

被引：0

作者：

TANDON, JL ^{[1
]}

EISEN, FH ^{[1
]}

机构：

[1] ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 11期

关键词：

D O I：

10.1109/T-ED.1979.19715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1833 / 1833

页数：1

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