EMPIRICAL INTERATOMIC POTENTIAL FOR SILICON WITH IMPROVED ELASTIC PROPERTIES

被引：1369

作者：

TERSOFF, J

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.38.9902

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9902 / 9905

页数：4

共 20 条

[1]

BALLONE P, COMMUNICATION

[2] MIGRATION OF INTERSTITIALS IN SILICON [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1984, 30 (06) :3460-3469

[3] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J].

BARYAM, Y ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW B, 1984, 30 (04) :1844-1852

[4] APPLICATION OF THE EMBEDDED-ATOM METHOD TO COVALENT MATERIALS - A SEMIEMPIRICAL POTENTIAL FOR SILICON [J].

BASKES, MI .

PHYSICAL REVIEW LETTERS, 1987, 59 (23) :2666-2669

[5] STABILITY AND ELECTRONIC-PROPERTIES OF COMPLEX STRUCTURES OF SILICON AND CARBON UNDER PRESSURE - DENSITY-FUNCTIONAL CALCULATIONS [J].

BISWAS, R ;

MARTIN, RM ;

NEEDS, RJ ;

NIELSEN, OH .

PHYSICAL REVIEW B, 1987, 35 (18) :9559-9568

[6] MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON [J].

CAR, R ;

KELLY, PJ ;

OSHIYAMA, A ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1985, 54 (04) :360-363

[7] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].

CAR, R ;

KELLY, PJ ;

OSHIYAMA, A ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817

[8]

CAR R, COMMUNICATION

[9] DEVELOPMENT OF A MANY-BODY TERSOFF-TYPE POTENTIAL FOR SILICON [J].

DODSON, BW .

PHYSICAL REVIEW B, 1987, 35 (06) :2795-2798

[10] PHONON-SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

KANE, EO .

PHYSICAL REVIEW B, 1985, 31 (12) :7865-7876

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