STIMULATED-EMISSION NEAR ULTRAVIOLET AT ROOM-TEMPERATURE FROM A GAN FILM GROWN ON SAPPHIRE BY MOVPE USING AN AIN BUFFER LAYER

被引：146
作者：
AMANO, H
ASAHI, T
AKASAKI, I
机构：
[1] School of Engineering, Nagoya University, Nagoya
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期
关键词：
AIN buffer layer; GaN; RT; Stimulated emission; UV;
D O I：
10.1143/JJAP.29.L205
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer. This indicates that the GaN film is promising for the realization of an UV laser diode. © 1990 IOP Publishing Ltd.
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收藏
页码：L205 / L206
页数：2
相关论文
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