CRITICAL PRESSURE FOR METAL-SEMICONDUCTOR TRANSITION IN V2O3

被引：110
作者：
MCWHAN, DB
RICE, TM
机构：
[1] Bell Telephone Laboratories, Murray Hill, NJ
来源：
PHYSICAL REVIEW LETTERS | 1969年 / 22卷 / 17期
关键词：
D O I：
10.1103/PhysRevLett.22.887
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The metal-semiconductor transition in V2O3 is found to be suppressed above 26 kbar which corresponds to a volume compression of 0.9%. The temperature and volume dependence of the resistivity of the metallic phase is consistent with semimetallic behavior and a pressure-dependent band overlap. We propose that the metal-semiconductor transition in V2O3 may be driven by the Coulomb attraction between electrons and holes and may be an example of an excitonic phase change. © 1969 The American Physical Society.
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页码：887 / +
页数：1
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