STRUCTURAL AND ELECTRICAL PROPERTIES OF VANADIUM DIOXIDE THIN FILMS

被引：62

作者：

ROZGONYI, GA

HENSLER, DH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1968年 / 5卷 / 06期

关键词：

D O I：

10.1116/1.1492608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：194 / +

页数：1

共 17 条

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ADLER, D ;

BROOKS, H .

PHYSICAL REVIEW, 1967, 155 (03) :826-+

[2] INFRARED OPTICAL PROPERTIES OF VANADIUM DIOXIDE ABOVE AND BELOW TRANSITION TEMPERATURE [J].

BARKER, AS ;

VERLEUR, HW ;

GUGGENHEIM, HJ .

PHYSICAL REVIEW LETTERS, 1966, 17 (26) :1286-+

[3] ANISOTROPY OF THE ELECTRICAL CONDUCTIVITY OF VO(2) SINGLE CRYSTALS [J].

Bongers, P. F. .

SOLID STATE COMMUNICATIONS, 1965, 3 (09) :275-277

[4] REACTIVELY SPUTTERED VANADIUM DIOXIDE THIN FILMS [J].

FULS, EN ;

HENSLER, DH ;

ROSS, AR .

APPLIED PHYSICS LETTERS, 1967, 10 (07) :199-&

[5]

GUGGENHEIM HJ, TO BE PUBLISHED

[6]

HANNAY NB, 1959, SEMICONDUCTORS ED, pCH14

[7] TRANSPORT PROPERTIES OF SPUTTERED VANADIUM DIOXIDE THIN FILMS [J].

HENSLER, DH .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2354-+

[8] HALL EFFECT OF VANADIUM DIOXIDE POWDER [J].

KITAHIRO, I ;

OHASHI, T ;

WATANABE, A .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (11) :2422-&

[9] EPITAXIAL GROWTH OF VO2 SINGLE CRYSTALS AND THEIR ANISOTROPIC PROPERTIES IN ELECTRICAL RESISTIVITIES [J].

KOIDE, S ;

TAKEI, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) :946-&

[10] PREPARATION AND PROPERTIES OF VANADIUM DIOXIDE FILMS [J].

MACCHESNEY, JB ;

POTTER, JF ;

GUGGENHEIM, HJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :52-+

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