COMPOSITION OF ANODIC OXIDES GROWN ON INP

被引:3
|
作者
SALVI, M
FAVENNEC, PN
LHARIDON, H
PELOUS, GP
机构
关键词
D O I
10.1016/0040-6090(82)90564-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:13 / 16
页数:4
相关论文
共 50 条
  • [21] FORMATION OF ANODIC PLASMA OXIDES ON INP, GAAS AND SI THROUGH AL AND SM OVERLAYERS
    PINCIK, E
    THURZO, I
    NADAZDY, V
    BARTOS, J
    JERGEL, M
    KOCANDA, J
    APPLIED SURFACE SCIENCE, 1994, 78 (03) : 239 - 248
  • [22] THE COMPOSITION OF OXIDES GROWN ON PBLNAU FILMS BY RF OXIDATION
    BAKER, JM
    MAGERLEIN, JH
    JOHNSON, RW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 418 - 419
  • [23] Composition fluctuations in strained InGaAlAs layers grown on (001)InP
    Murray, RT
    Kiely, CJ
    Goodhew, PJ
    Hopkinson, M
    ELECTRON MICROSCOPY AND ANALYSIS 1995, 1995, 147 : 373 - 376
  • [24] THE COMPOSITION OF OXIDES GROWN ON PBLNAU FILMS BY RF OXIDATION
    BAKER, JM
    MAGERLEIN, JH
    JOHNSON, RW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 175 - 181
  • [25] ELECTRONIC PROPERTIES OF ANODIC OXIDES GROWN ON GAAS0.6P0.4
    AHRENKIEL, RK
    MOSER, F
    LYU, SL
    COBURN, TJ
    THIN SOLID FILMS, 1979, 56 (1-2) : 117 - 128
  • [26] Effect of composition on the photoelectrochemical behavior of anodic oxides on binary aluminum alloys
    Santamaria, M.
    Di Quarto, F.
    Skeldon, P.
    Thompson, G. E.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (12) : B518 - B526
  • [27] CHEMICAL-COMPOSITION OF NATIVE AND ANODIC OXIDES ON INDIUM-ANTIMONIDE
    GNEDENKOV, SV
    ZELENSKII, YV
    MISHCHENKO, NM
    KANDINSKII, MP
    GORDIENKO, PS
    SHEVCHENKO, VY
    INORGANIC MATERIALS, 1985, 21 (05) : 657 - 660
  • [28] SURFACE-TOPOGRAPHY OF OXIDES ON INP THERMALLY GROWN AT HIGH-TEMPERATURES
    MCLAREN, JJ
    NELSON, A
    GEIB, K
    GANN, R
    WILMSEN, CW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1486 - 1490
  • [29] Chemical composition and thermal stability of GaAs oxides grown by AFM anodic oxidation for site-controlled growth of InAs quantum dots
    Cha, K. M.
    Shibata, K.
    Horiuchi, I.
    Kamiko, M.
    Yamamoto, R.
    Hirakawa, K.
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [30] ANODIC OXIDES ON GAAS .1. ANODIC NATIVE OXIDES ON GAAS
    BAYRAKTAROGLU, B
    HARTNAGEL, HL
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1978, 45 (04) : 337 - 352