IDEAL HYDROGEN TERMINATION OF SI(001) SURFACE BY WET-CHEMICAL PREPARATION

被引：89

作者：

MORITA, Y

TOKUMOTO, H

机构：

[1] Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Research, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 18期

关键词：

D O I：

10.1063/1.114326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A nearly ideal Si(001) surface was prepared by a wet-chemical method with a solution of HF:HCl=1:19 (pH<1). The surface was examined by scanning tunneling microscopy and was found to be covered by the uniform dihydride phase. Its successful preparation was the direct consequence of the following facts: The suppression of the (111) facet formation due to a low concentration of OH ions in the etchant solution and the stabilization of the surfaces structure due to the formation of the ordered steps. (C) 1995 American Institute of Physics.

引用

页码：2654 / 2656

页数：3

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