A HIGH-TC SUPERCONDUCTING THIN-FILM SWITCH CONTROLLED BY A FIELD-EMITTED ELECTRON-BEAM

被引：0
作者：
SHKURATOV, SI
机构：
[1] Institute of Electrophysics, Urals Division, Russian Academy of Sciences, Ekaterinburg, 620219, 34 Komsomolskaya Street
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1994年 / 27卷 / 02期
关键词：
D O I：
10.1088/0022-3727/27/2/029
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A design variant of a high-temperature superconducting thin-film switching device controlled by a field-emitted electron beam is proposed. Numerical simulation shows that the superconducting-to-normal state transition time in such a device will be about several hundred picoseconds. Results of analysis of the dynamics of heating and switching of high-temperature superconducting thin film from superconducting to normal state under the action of a surface pulsed energy flow are presented.
引用
收藏
页码：376 / 378
页数：3
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