SPECTRUM AND POLARIZATION OF RECOMBINATION RADIATION IN DEFORMED SILICON

被引：0

作者：

AKEEV, NV ^{[1
]}

KAMINSKII, AS ^{[1
]}

POKROVSK.YE ^{[1
]}

机构：

[1] ACAD SCI USSR, RADIO ENGN & ELECTR INST, MOSCOW, USSR

来源：

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：393 / 395

页数：3

共 7 条

[1] AKEEV NV, 1973, PISMA ESKP TEOR FIZ, V18, P671
[2] ASHKINADZE BM, 1971, SOV PHYS SEMICOND, V3, P1897
[3] ASHKINADZE BM, 1970, FIZ TEKH POLUPROV, V3, P2206
[4] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM
BALSLEV, I
[J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &
[5] Kaminskii A. S., 1970, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V59, P1937
[6] KAMINSKII AS, 1971, SOV PHYS JETP-USSR, V32, P1048
[7] VALLEY-ORBIT SPLITTING OF FREE EXCITONS - ABSORPTION EDGE OF SI
SHAKLEE, KL
NAHORY, RE
[J]. PHYSICAL REVIEW LETTERS, 1970, 24 (17) : 942 - &