High-temperature processing of crystalline silicon thin-film solar cells

被引：27

作者：

Reber, S ^{[1
]}

Wettling, W ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst, ISE, D-79100 Freiburg, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / 02期

关键词：

D O I：

10.1007/s003390050992

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The crystalline silicon thin-film solar cell combines, in principle, the advantages of crystalline silicon wafer-based solar cells and of thin-film solar cell technologies. Its efficiency potential is the highest of all thin-film cells. In the "high-temperature approach" thin silicon layers are deposited on substrates that withstand processing temperatures higher than 1000 degrees C. The basic features of the high-temperature crystalline silicon thin-film cell technology are described and some important results are discussed.

引用

页码：215 / 220

页数：6

共 34 条

[1]

Aberle A. G., 1997, P 14 EUR PHOT SOL EN, P684

[2]

BRENDEL R, 1997, P 14 EUR PHOT SOL EN, P1354

[3]

CATCHPOLE KR, 1998, P 2 WORLD C PHOT SOL, P1336

[4] LPCVD REXSIYNZ DIFFUSION-BARRIERS IN SI/SIO2/CU METALLIZATIONS [J].

DUTRON, AM ;

BLANQUET, E ;

BERNARD, C ;

BACHLI, A ;

MADAR, R .

APPLIED SURFACE SCIENCE, 1995, 91 (1-4) :277-284

[5]

ELGAMEL HE, 1994, P 12 EUR PHOT SOL EN, P724

[6]

Faller F.R., 1998, P 2 WORLD C PHOT EN, P1278

[7]

FALLER FR, 1998, MRS SPRING M SAN FRA

[8]

HEBLING C, 1995, P 13 EUR PHOT SOL EN, P1512

[9]

HEBLING C, 1999, ADV SOLID STATE PHYS, V38, P633

[10]

HEBLING C, 1997, P 26 IEEE PHOT SPEC, P623

← 1 2 3 4 →