VIBRONIC LEVELS OF THE EL2 CENTER UNDER UNIAXIAL-STRESS

被引:6
作者
MARTINELLI, L [1 ]
机构
[1] UNIV PAVIA,DIPARTIMENTO FIS A VOLTA,I-27100 PAVIA,ITALY
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 24期
关键词
D O I
10.1103/PhysRevB.46.15795
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the vibronic levels of the arsenic antisite defect in GaAs and the optical properties associated with the A1-->T2 transition of the As(Ga) defect. In our model we include both the Jahn-Teller effect on the T2-degenerate states and the effect of a uniaxial stress applied along several crystal directions; the coupled system of electron-vibrational states is handled with the recursion method. With a coupling with a phonon mode of symmetry tau2 we have calculated the features of the transition line at 8378 cm-1 and its replicas; relationships with available experimental data and microscopic models are discussed.
引用
收藏
页码:15795 / 15800
页数:6
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