REFLECTOMETRIC STUDY OF DANGLING-BOND SURFACE-STATES AND OXYGEN-ADSORPTION ON THE CLEAN SI(111)7X7 SURFACE

被引：44
作者：
WIERENGA, PE
VANSILFHOUT, A
SPARNAAY, MJ
机构：
[1] Twente University of Technology, Department of Applied Physics, Enschede
来源：
SURFACE SCIENCE | 1979年 / 87卷 / 01期
关键词：
D O I：
10.1016/0039-6028(79)90168-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
External differential reflection measurements were carried out on clean Si (111)7 × 7 surfaces in the photon-energy range of 1.0-3.0 eV at 300 and 80 K. The results at 300 K showed a main peak in the joint density-of-states curve for optical transitions from the filled dangling-bond surface-states band to empty bulk-conduction band levels at 2.9 ± 0.1 eV and a shoulder at the low-energy side. At 80 K the shoulder sharpened to a real second peak at 1.76 ± 0.04 eV. Oxygen adsorption in the submonolayer region appeared to take place preferentially on the surface atoms which were responsible for the second peak. © 1979.
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页码：43 / 52
页数：10
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