REFLECTOMETRIC STUDY OF DANGLING-BOND SURFACE-STATES AND OXYGEN-ADSORPTION ON THE CLEAN SI(111)7X7 SURFACE

被引：44
作者：
WIERENGA, PE
VANSILFHOUT, A
SPARNAAY, MJ
机构：
[1] Twente University of Technology, Department of Applied Physics, Enschede
来源：
SURFACE SCIENCE | 1979年 / 87卷 / 01期
关键词：
D O I：
10.1016/0039-6028(79)90168-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
External differential reflection measurements were carried out on clean Si (111)7 × 7 surfaces in the photon-energy range of 1.0-3.0 eV at 300 and 80 K. The results at 300 K showed a main peak in the joint density-of-states curve for optical transitions from the filled dangling-bond surface-states band to empty bulk-conduction band levels at 2.9 ± 0.1 eV and a shoulder at the low-energy side. At 80 K the shoulder sharpened to a real second peak at 1.76 ± 0.04 eV. Oxygen adsorption in the submonolayer region appeared to take place preferentially on the surface atoms which were responsible for the second peak. © 1979.
引用
收藏
页码：43 / 52
页数：10
相关论文
共 22 条
[1]  
Chiarotti, Nannarone, Pastore, Chiaradia, Phys. Rev., 4 B, (1971)
[2]  
Chiarotti, Chiaradia, Nannarone, Optical absorption of surface states at Si(111) 7 × 7, Surface Science, 49, (1975)
[3]  
Rowe, Ibach, Surface Sci., 48, (1975)
[4]  
Meyer, de Kluizenaar, Bootsma, Surface Sci., 27, (1971)
[5]  
Meyer, Surface Sci., 56, (1976)
[6]  
Okada, Fujita, Japan. J. Appl. Phys., 13, (1974)
[7]  
Comins, Grant, J. Phys., 6 E, (1973)
[8]  
McIntyre, Aspnes, Surface Sci., 24, (1971)
[9]  
Haneman, Phys. Rev., 121, (1961)
[10]  
Schlier, Farnsworth, J. Chem. Phys., 30, (1959)
123