RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .2. MIGRATION OF FLUORINE IN BF2+-IMPLANTED SILICON

被引：106
作者：
TSAI, MY
DAY, DS
STREETMAN, BG
WILLIAMS, P
EVANS, CA
机构：
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] UNIV ILLINOIS,SCH CHEM SCI,URBANA,IL 61801
来源：
JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 01期
关键词：
D O I：
10.1063/1.325689
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fluorine distribution profiles for silicon implanted with BF +2 have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion of fluorine occurs during recrystallization of the amorphous layer, and fluorine collects in regions of residual damage during annealing. This gettering of fluorine by defects illustrates the residual damage below the amorphized layer in samples implanted at room temperature is more difficult to anneal out than that in samples implanted at lower temperture (∼-110°C).
引用
收藏
页码：188 / 192
页数：5
相关论文
共 16 条
[1]  
BEANLAND DG, 1977, ION IMPLANTATION SEM, P31
[2]   CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].
CSEPREGI, L ;
MAYER, JW ;
SIGMON, TW .
PHYSICS LETTERS A, 1975, 54 (02) :157-158
[3]   F-19 RANGE-ENERGY CURVE IN SI FROM 100 TO 550 KEV [J].
DIETRICH, HB ;
PLEW, LE .
APPLIED PHYSICS LETTERS, 1976, 29 (07) :406-408
[4]   ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI [J].
DIETRICH, HB ;
WEISENBERGER, WH ;
COMAS, J .
APPLIED PHYSICS LETTERS, 1976, 28 (04) :182-184
[5]  
DIETRICH HB, 1977, ION IMPLANTATION SEM, P735
[6]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[7]   DAMAGE EFFECTS IN BORON AND BF2 ION-IMPLANTED P+-N JUNCTIONS IN SILICON [J].
MACIVER, BA ;
GREENSTEIN, E .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :273-275
[8]  
Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042
[9]  
MULLER H, 1971, ION IMPLANTATION SEM, P85
[10]  
PRUSSIN S, 1975, ION IMPLANTATION SEM, P449
12