SINGLE STACKING-FAULTS IN HIGH-STRESS DEFORMED SEMIINSULATING GAAS

被引：27

作者：

LEFEBVRE, A

ANDROUSSI, Y

VANDERSCHAEVE, G

机构：

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1987年 / 56卷 / 04期

关键词：

D O I：

10.1080/09500838708203761

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：135 / 141

页数：7

共 12 条

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[9] A TEM INVESTIGATION OF THE DISLOCATION ROSETTES AROUND VICKERS INDENTATIONS IN GAAS [J].

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[10] TRANSMISSION ELECTRON-MICROSCOPY OF SEMI-INSULATING GA AS DEFORMED AT ROOM-TEMPERATURE AND UNDER CONFINING PRESSURE [J].

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