SURFACE CHARACTERIZATION STUDIES ON CHEMICALLY VAPOR DEPOSITED TUNGSTEN

被引：6

作者：

THOMPSON, JR

DANKO, JC

GREGORY, TL

WEBSTER, HF

机构：

[1] Nuclear Thermionic Power Operation General Electric Company, Pleasanton, Calif.

[2] Research and Development Center, General Electric Company, Schenectady, N.Y.

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 08期

关键词：

D O I：

10.1109/T-ED.1969.16843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface characterization studies were performed on chemically vapor deposited (CVD) tungsten. Two specimens of tungsten were taken from each of three sample lots and prepared with standard cleaning and firing procedures and then electropolished. In order to evaluate the effect of grain size, one set of specimens was given an additional vacuum firing at 2500°C to promote grain growth. Surfaces of tungsten were characterized by Auger analysis, X-ray diffraction analysis, etch pit analysis, and low energy electron diffraction (LEED) analysis. A description of the various methods along with the results are presented. Copyright © 1969 by The Institute of Electrical and Electronics Engrneers, Inc.

引用

页码：707 / &

共 12 条

[1] BARRETT CS, 1966, STRUCTURE METALS, P193
[2] Batzies P., 1968, 2 P INT C THERM EL P, P1303
[3] FESTA JV, 1967, SEP P C CVD REFR MET, P349
[4] LOW-ENERGY ELECTRON DIFFRACTION
GERMER, LH
[J]. PHYSICS TODAY, 1964, 17 (07) : 19 - 23
[5] ANALYSIS OF MATERIALS BY ELECTRON-EXCITED AUGER ELECTRONS
HARRIS, LA
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1419 - &
[6] HOUSTON JM, 1968, AFCRL680058 FIN REPT, P8
[7] ROBINSON WC, 1967, DEP P C CHEM VAP DEP, P109
[8] THIVELLIER V, 1968, 2 P INT C THERM EL P, P1313
[9] WILSON VC, 1967, OCT P IEEE THERM CON, P1
[10] YANG L, 1967, SEP P C CHEM VAP DEP, P329

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