PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN GERMANIUM PARA-NORMAL JUNCTIONS

被引：33

|

作者：

CHYNOWETH, AG

GUMMEL, HK

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1960年 / 16卷 / 3-4期

关键词：

D O I：

10.1016/0022-3697(60)90149-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：191 / &

相关论文

共 50 条

[1] THE EFFECTS OF PRESSURE AND TEMPERATURE ON THE RESISTANCE OF PARA-NORMAL JUNCTIONS IN GERMANIUM
HALL, HH
BARDEEN, J
PEARSON, GL
PHYSICAL REVIEW, 1951, 83 (04): : 879 - 879
[2] THEORETICAL MODEL FOR CALCULATION OF BREAKDOWN VOLTAGE OF IMPLANTED PARA-NORMAL JUNCTIONS
KERESZTES, P
MOHACSI, T
HEGEDUS, A
SOLID-STATE ELECTRONICS, 1976, 19 (05) : 415 - 418
[3] ON THE THEORY OF THE PHOTOMAGNETIC EFFECT IN PARA-NORMAL JUNCTIONS
RAVICH, YI
SOVIET PHYSICS-SOLID STATE, 1963, 4 (09): : 1767 - 1770
[4] MEASUREMENTS ON PARA-NORMAL JUNCTIONS IN LEAD SULPHIDE
MOSS, TS
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (10): : 697 - 700
[5] BARRIER TEMPERATURE AT TURNOVER IN GERMANIUM PARA-NORMAL JUNCTION
YAMAGUCHI, J
HAMAKAWA, Y
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1959, 14 (02) : 232 - 233
[6] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON
CHYNOWETH, AG
MCKAY, KG
PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376
[7] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS
LOGAN, RA
CHYNOWETH, AG
COHEN, BG
PHYSICAL REVIEW, 1962, 128 (06): : 2518 - &
[8] EFFECT OF THE PROBE METAL IN LOCATING A PARA-NORMAL BARRIER IN GERMANIUM
STAHL, FA
PHYSICAL REVIEW, 1951, 83 (04): : 879 - 879
[9] SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS
GOBELI, GW
ALLEN, FG
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 23 - &
[10] INITIAL STAGE OF BREAKDOWN IN GERMANIUM PARA JUNCTIONS
SHAPOVALOV, VP
PALEI, VM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (04): : 586 - +

← 1 2 3 4 5 →