HIGH-EFFICIENCY WAVE-GUIDE INGAAS PIN PHOTODIODE WITH BANDWIDTH OF OVER 40 GHZ

被引：18
作者：
KATO, K
HATA, S
KOZEN, A
YOSHIDA, J
KAWANO, K
机构：
[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa Prefecture, 243-01
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 05期
关键词：
D O I：
10.1109/68.93883
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A waveguide pin photodiode structure was designed in consideration of both wide bandwidth and highly efficient coupling to the fiber. The device performed with a bandwidth higher than 40 GHz, and had high responsivity of 0.55 A/W (external quantum efficiency of 44%), showing superiority of bandwidth-efficiency product over the surface-illuminated photodiodes in the ultrahigh-frequency region.
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页码：473 / 474
页数：2
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