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THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AND HOLES AT SILVER CENTERS IN SILICON
被引:22
作者
:
YAU, LD
论文数:
0
引用数:
0
h-index:
0
YAU, LD
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
SMILEY, CF
论文数:
0
引用数:
0
h-index:
0
SMILEY, CF
机构
:
来源
:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
|
1972年
/ 13卷
/ 02期
关键词
:
D O I
:
10.1002/pssa.2210130214
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:457 / &
相关论文
共 17 条
[1]
BOLTAKS BI, 1961, SOVIET PHYS SOLID ST, V2, P2382
[2]
BOLTAKS BI, 1965, SOVIET PHYS SOLID ST, V6, P1519
[3]
IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE
BUEHLER, MG
论文数:
0
引用数:
0
h-index:
0
BUEHLER, MG
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(01)
: 69
-
+
[4]
PROPERTIES OF GOLD-DOPED SILICON
COLLINS, CB
论文数:
0
引用数:
0
h-index:
0
COLLINS, CB
CARLSON, RO
论文数:
0
引用数:
0
h-index:
0
CARLSON, RO
GALLAGHER, CJ
论文数:
0
引用数:
0
h-index:
0
GALLAGHER, CJ
[J].
PHYSICAL REVIEW,
1957,
105
(04):
: 1168
-
1173
[5]
IRMLER H, 1958, Z NATURFORSCH PT A, V13, P557
[6]
KUKIMOTO H, TO BE PUBLISHED
[7]
THERMAL EMISSION AND CAPTURE OF ELECTRONS AT SULFUR CENTERS IN SILICON
ROSIER, LL
论文数:
0
引用数:
0
h-index:
0
ROSIER, LL
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(01)
: 41
-
+
[8]
THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
SAH, CT
FORBES, L
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
FORBES, L
ROSIER, LI
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
ROSIER, LI
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TASCH, AF
TOLE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TOLE, AB
[J].
APPLIED PHYSICS LETTERS,
1969,
15
(05)
: 145
-
+
[9]
LOW-TEMPERATURE HIGH-FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP- AND SHALLOW-LEVEL IMPURITY CENTER CONCENTRATIONS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
SAH, CT
ROSIER, LL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
ROSIER, LL
FORBES, L
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
FORBES, L
[J].
APPLIED PHYSICS LETTERS,
1969,
15
(06)
: 161
-
+
[10]
THERMALLY STIMULATED CAPACITANCE (TSCAP) IN P-N-JUNCTIONS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
WALKER, JW
论文数:
0
引用数:
0
h-index:
0
WALKER, JW
CHAN, WW
论文数:
0
引用数:
0
h-index:
0
CHAN, WW
FU, HS
论文数:
0
引用数:
0
h-index:
0
FU, HS
[J].
APPLIED PHYSICS LETTERS,
1972,
20
(05)
: 193
-
&
←
1
2
→
共 17 条
[1]
BOLTAKS BI, 1961, SOVIET PHYS SOLID ST, V2, P2382
[2]
BOLTAKS BI, 1965, SOVIET PHYS SOLID ST, V6, P1519
[3]
IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE
BUEHLER, MG
论文数:
0
引用数:
0
h-index:
0
BUEHLER, MG
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(01)
: 69
-
+
[4]
PROPERTIES OF GOLD-DOPED SILICON
COLLINS, CB
论文数:
0
引用数:
0
h-index:
0
COLLINS, CB
CARLSON, RO
论文数:
0
引用数:
0
h-index:
0
CARLSON, RO
GALLAGHER, CJ
论文数:
0
引用数:
0
h-index:
0
GALLAGHER, CJ
[J].
PHYSICAL REVIEW,
1957,
105
(04):
: 1168
-
1173
[5]
IRMLER H, 1958, Z NATURFORSCH PT A, V13, P557
[6]
KUKIMOTO H, TO BE PUBLISHED
[7]
THERMAL EMISSION AND CAPTURE OF ELECTRONS AT SULFUR CENTERS IN SILICON
ROSIER, LL
论文数:
0
引用数:
0
h-index:
0
ROSIER, LL
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(01)
: 41
-
+
[8]
THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
SAH, CT
FORBES, L
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
FORBES, L
ROSIER, LI
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
ROSIER, LI
TASCH, AF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TASCH, AF
TOLE, AB
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
TOLE, AB
[J].
APPLIED PHYSICS LETTERS,
1969,
15
(05)
: 145
-
+
[9]
LOW-TEMPERATURE HIGH-FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP- AND SHALLOW-LEVEL IMPURITY CENTER CONCENTRATIONS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
SAH, CT
ROSIER, LL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
ROSIER, LL
FORBES, L
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana
FORBES, L
[J].
APPLIED PHYSICS LETTERS,
1969,
15
(06)
: 161
-
+
[10]
THERMALLY STIMULATED CAPACITANCE (TSCAP) IN P-N-JUNCTIONS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
WALKER, JW
论文数:
0
引用数:
0
h-index:
0
WALKER, JW
CHAN, WW
论文数:
0
引用数:
0
h-index:
0
CHAN, WW
FU, HS
论文数:
0
引用数:
0
h-index:
0
FU, HS
[J].
APPLIED PHYSICS LETTERS,
1972,
20
(05)
: 193
-
&
←
1
2
→