HIGH-TEMPERATURE OPERATED ENHANCEMENT-TYPE BETA-SIC MOSFET

[1] 3C-SIC P-N-JUNCTION DIODES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (22) : 1536 - 1537

[2] HIGH-TEMPERATURE OPERATION OF SILICON-CARBIDE MOSFET [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (02): : 310 - 311

[3] EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS ON 6H ALPHA-SIC SUBSTRATES VIA CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1074 - 1076

[4] TEMPERATURE-DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN N-TYPE BETA-SIC GROWN VIA CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 442 - 444

[5] MARSH OJ, 1973, SILICON CARBIDE 1973, P471

[6] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[7] INTERFACE STRUCTURES IN BETA-SILICON CARBIDE THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 203 - 205

[8] HIGH-TEMPERATURE DEPLETION-MODE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN BETA-SIC THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (24) : 2028 - 2030

[9] FABRICATION OF INVERSION-TYPE N-CHANNEL MOSFETS USING CUBIC-SIC ON SI(100) [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 692 - 693

[10] SUZUKI A, 1986, 18TH C SOL STAT DEV

[1] 3C-SIC P-N-JUNCTION DIODES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (22) : 1536 - 1537

[2] HIGH-TEMPERATURE OPERATION OF SILICON-CARBIDE MOSFET [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (02): : 310 - 311

[3] EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS ON 6H ALPHA-SIC SUBSTRATES VIA CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1074 - 1076

[4] TEMPERATURE-DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN N-TYPE BETA-SIC GROWN VIA CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 442 - 444

[5] MARSH OJ, 1973, SILICON CARBIDE 1973, P471

[6] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[7] INTERFACE STRUCTURES IN BETA-SILICON CARBIDE THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 203 - 205

[8] HIGH-TEMPERATURE DEPLETION-MODE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN BETA-SIC THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (24) : 2028 - 2030

[9] FABRICATION OF INVERSION-TYPE N-CHANNEL MOSFETS USING CUBIC-SIC ON SI(100) [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 692 - 693

[10] SUZUKI A, 1986, 18TH C SOL STAT DEV